PACDN004_15 Datasheet, PDF (3/7 Pages) ON Semiconductor – 2-Channel ESD Protection Array

PACDN004, SZPACDN004
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Supply Voltage (V_P − V_N)
Diode Forward DC Current (Note 1)
6.0
V
20
mA
Operating Temperature Range
−40 to +85
°C
Storage Temperature Range
−65 to +150
°C
DC Voltage at any Channel Input
(V_N − 0.5) to (V_P + 0.5)
V
Package Power Rating
225
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Only one diode conducting at a time.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Rating
Units
Operating Temperature Range
−40 to +85
°C
Operating Supply Voltage (V_P − V_N)
0 to 5.5
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I_P
Supply Current
(V_P − V_N) = 5.5 V
10
mA
V_F
I_LEAK
C_IN
Diode Forward Voltage
Channel Leakage Current
Channel Input Capacitance
I_F = 20 mA
0.65
0.95
V
±0.1
±1.0
mA
@ 1 MHz, V_P = 5 V,
V_N = 0 V, V_IN = 2.5 V
3
5
pF
V_ESD
ESD Protection
kV
Peak Discharge Voltage at any
(Note 2)
Channel Input, in System
a) Human Body Model,
(Notes 2 and 3)
±15
MIL−STD−883, Method 3015
b) Contact Discharge per
(Notes 2 and 4)
±8
IEC 61000−4−2 Standard
c) Air Discharge per IEC 61000−4−2 (Notes 2 and 4)
±15
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
@ 15 kV ESD HBM
(Notes 2 and 3)
V
V_P + 13.0
V_N − 13.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. All parameters specified at T_A = 25°C unless otherwise noted. V_P = 5 V, V_N = 0 V unless noted.
2. From I/O pins to V_P or V_N only. V_P bypassed to V_N with a 0.22 mF ceramic capacitor (see Application Information for more details).
3. Human Body Model per MIL−STD−883, Method 3015, C_Discharge = 100 pF, R_Discharge = 1.5 kW, V_P = 5.0 V, V_N grounded.
4. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W, V_P = 5.0 V, V_N grounded.
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