NTSAF545 Datasheet, PDF (3/5 Pages) ON Semiconductor – Trench-based Schottky Rectifier

NTSAF545
TYPICAL CHARACTERISTICS
100
100
10
T_A = 150°C
T_A = 125°C
10
T_A = 150°C
T_A = 125°C
1
1
T_A = 25°C
T_A = −55°C
0.1
0.1 0.2
0.3
0.4
0.5
0.6
0.7
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
T_A = 25°C
T_A = −55°C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E+00
1.E−02
1.E−03
1.E−04
T_A = 150°C
T_A = 125°C
1.E−05
1.E−06
T_A = 25°C
1.E−07
5 10 15 20 25 30 35 40
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−01
1.E−02
1.E−03
T_A = 150°C
T_A = 125°C
1.E−04
1.E−05
T_A = 25°C
1.E−06
1.E−07
45
5 10 15 20 25 30 35 40 45
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
1000
100
T_J = 25°C
10
0.1
1
10
V_R, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
12
11
10
9
8
DC
7
6 ^{Square Wave}
5
4
3
2
1 R_qJC = 26.9°C/W
0
0 20 40 60
80 100 120 140
T_C, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Device
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3