NTR4501N Datasheet, PDF (3/6 Pages) ON Semiconductor – Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23

NTR4501N
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
V_GS = 10 V
V_GS = 2.2 V
V_GS = 3.0 V
V_GS = 2.0 V _{TJ = 25°C}
V_GS = 1.8 V
.
V_GS = 1.6 V
V_GS = 1.4 V
V_GS = 1.2 V
1 2 3 4 5 6 7 8 9 10
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
7.0
V_DS ≥ 10 V
6.0
5.0
4.0
3.0
2.0
T_J = 25°C
T_J = 55°C
1.0
T_J = 100°C
0
0
1.0
1.5
2.0
2.5
3.0
3.5
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.25
0.20
0.15
I_D = 3.2 A
T_J = 25°C
0.10
0.10
T_J = 25°C
0.09
0.08
0.07
0.06
V_GS = 2.5 V
V_GS = 4.5 V
0.05
1.0
1.4
2.0
3.0
4.0
5.0
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
1.2
I_D = 3.2 A
1.0
V_GS = 4.5 V
0.8
0.05
6.0
0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1000
V_GS = 0 V
T_J = 150°C
100
10
T_J = 100°C
0.6
−50
−25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.0
2
6
10
14
18
20
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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