NTMFS4C020N Datasheet, PDF (3/6 Pages) ON Semiconductor – Power MOSFET

NTMFS4C020N
TYPICAL CHARACTERISTICS
400
10 V
350
300
250
3.6 V
3.4 V
4.5 V
3.2 V
400
350
V_DS = 3 V
300
250
200
3.0 V
200
T_J = 25°C
150
150
100
2.8 V
100
T_J = 150°C
50
V_GS = 2.6 V
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1.5
2
T_J = −55°C
2.5
3
3.5
4
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
V_GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.4
I_D = 30 A
T_J = 25°C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
3
4
5
6
7
8
9
10
V_GS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.5
1.4 ^{TJ = 25°C}
1.3
1.2
1.1
1.0
V_GS = 4.5 V
0.9
0.8
0.7
V_GS = 10 V
0.6
0
50 100 150 200 250 300 350 400
I_D, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
V_GS = 10 V
I_D = 30 A
1.4
1.2
100000
10000
1000
T_J = 125°C
T_J = 100°C
1.0
T_J = 85°C
100
0.8
0.6
−50 −25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
0
5
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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