NTMFS4983NFT1G Datasheet, PDF (3/7 Pages) ON Semiconductor – Power MOSFET 30 V, 106 A, Single N−Channel, SO−8 FL

NTMFS4983NF
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t_d(ON)
Rise Time
t_r
Turn−Off Delay Time
t_d(OFF)
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS
V_GS = 10 V, V_DS = 15 V,
I_D = 15 A, R_G = 3.0 W
9.4
16.7
ns
35.2
7.4
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
V_SD
t_RR
t_a
t_b
Q_RR
V_GS = 0 V,
I_S = 2 A
T_J = 25°C
T_J = 125°C
V_GS = 0 V, dI_S/dt = 100 A/ms,
I_S = 2 A
0.4
0.7
V
0.32
45
23
ns
22
50
nC
Source Inductance
L_S
Drain Inductance
Gate Inductance
L_D
L_G
T_A = 25°C
Gate Resistance
R_G
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.65
nH
0.20
1.5
1.0
W
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