NSS40600CF8T1G Datasheet, PDF (3/5 Pages) ON Semiconductor – 40 V, 7.0 A, Low VCE(sat) PNP Transistor

NSS40600CF8T1G
0.25
0.20
I_C/I_B = 10
V_CE(sat) = 150°C
0.15
25°C
0.10
−55°C
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.35
0.30
I_C/I_B = 100
0.25
V_CE(sat) = 150°C
0.20
25°C
0.15
−55°C
0.10
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
750
650
550
450
350
250
150
50
0.001
150°C (5 V)
150°C (2 V)
25°C (5 V)
25°C (2 V)
−55°C (5 V)
−55°C (2 V)
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
1.2
I_C/I_B = 10
1.1
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
10
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9 V_CE = −1.0 V
0.8
0.7
0.6
−55°C
25°C
1.0
10 mA
0.8
0.6
100 mA
I_C = 500 mA
300 mA
0.5
150°C
0.4
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1.0
I_C, COLLECTOR CURRENT (A)
0.2
0
10
0.01
0.1
1.0
10
100
I_B, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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