NSS40300MDR2G Datasheet, PDF (3/6 Pages) ON Semiconductor – Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor

NSS40300MDR2G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc, I_B = 0)
V_(BR)CEO
−40
−
Vdc
−
Collector −Base Breakdown Voltage
(I_C = −0.1 mAdc, I_E = 0)
V_(BR)CBO
−40
−
Vdc
−
Emitter −Base Breakdown Voltage
(I_E = −0.1 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −40 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = −6.0 Vdc)
V_(BR)EBO
−7.0
−
Vdc
−
I_CBO
mAdc
−
−
−0.1
I_EBO
mAdc
−
−
−0.1
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I_C = −10 mA, V_CE = −2.0 V)
(I_C = −500 mA, V_CE = −2.0 V)
(I_C = −1.0 A, V_CE = −2.0 V)
(I_C = −2.0 A, V_CE = −2.0 V)
(I_C = −2.0 A, V_CE = −2.0 V) (Note 5)
Collector −Emitter Saturation Voltage (Note 4)
(I_C = −0.1 A, I_B = −0.010 A)
(I_C = −1.0 A, I_B = −0.100 A)
(I_C = −1.0 A, I_B = −0.010 A)
(I_C = −2.0 A, I_B = −0.200 A)
h_FE
250
380
−
220
340
−
180
300
−
150
230
−
h_FE(1)/h_FE(2)
0.9
0.99
−
V_CE(sat)
V
−
−0.013
−0.017
−
−0.075
−0.095
−
−0.130
−0.170
−
−0.135
−0.170
Base −Emitter Saturation Voltage (Note 4)
(I_C = −1.0 A, I_B = −0.01 A)
V_BE(sat)
V
−
−0.780
−0.900
Base −Emitter Turn−on Voltage (Note 4)
(I_C = −0.1 A, V_CE = −2.0 V)
(I_C = −0.1 A, V_CE = −2.0 V) (Note 6)
Cutoff Frequency
(I_C = −100 mA, V_CE = −5.0 V, f = 100 MHz)
V_BE(on)
−
V_{BE(1) −} V_BE(2)
−
f_T
100
−0.660
0.3
−
−0.750
2.0
−
V
mV
MHz
Input Capacitance (V_EB = −0.5 V, f = 1.0 MHz)
Output Capacitance (V_CB = −3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
Cobo
−
250
300
pF
−
50
65
pF
Delay (V_CC = −30 V, I_C = −750 mA, I_B1 = −15 mA)
t_d
−
−
60
ns
Rise (V_CC = −30 V, I_C = −750 mA, I_B1 = −15 mA)
t_r
−
−
120
ns
Storage (V_CC = −30 V, I_C = −750 mA, I_B1 = −15 mA)
t_s
−
−
400
ns
Fall (V_CC = −30 V, I_C = −750 mA, I_B1 = −15 mA)
t_f
−
−
130
ns
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. h_FE(1)/h_FE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller h_FE is used as numerator.
6. V_BE(1) − V_BE(2) is the absolute difference of one transistor compared to the other transistor within the same package.
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