NSS40201LT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – 40 V, 4.0 A, Low VCE(sat) NPN Transistor

NSS40201LT1G
0.25
0.2
I_C/I_B = 10
0.15
TYPICAL CHARACTERISTICS
150°C
0.35
0.3
I_C/I_B = 100
25°C
0.25
0.2
150°C
−55°C
25°C
0.1
−55°C
0.05
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
700
150°C (5.0 V)
600
150°C (2.0 V)
500
400
25°C (5.0 V)
25°C (2.0 V)
300
−55°C (5.0 V)
200
−55°C (2.0 V)
100
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
V_CE = 2.0 V
0.9
0.8
0.7
−55°C
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
0.15
0.1
0.05
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
I_C/I_B = 10
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
10 mA
300 mA
I_C = 500 mA
0.8
100 mA
0.6
0.4
0.2
0
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 6. Saturation Region
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