NSS40200UW6T1G Datasheet, PDF (3/5 Pages) ON Semiconductor – 40 V, 4.0 A, Low VCE(sat) PNP Transistor

NSS40200UW6T1G
0.15
I_C/I_B = 10
V_CE(sat) = 150°C
0.30
0.25
I_C/I_B = 100
V_CE(sat) = −55°C
0.10
0.20
0.15
25°C
25°C
0.05
0.10
150°C
−55°C
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
700
600
500
400
300
200
100
0.001
150°C (5 V)
150°C (2 V)
25°C (5 V)
25°C (2 V)
−55°C (5 V)
−55°C (2 V)
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
1.1
1.0 ^{IC/IB = 10}
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
10
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9 ^{VCE = −1.0 V}
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
10 mA
0.8
100 mA
I_C = 500 mA
0.6
0.4
0.2
0
0.01
300 mA
0.1
1.0
10
100
I_B, BASE CURRENT (mA)
Figure 6. Saturation Region
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