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NSS20200LT1G_16 Datasheet, PDF (3/6 Pages) ON Semiconductor – PNP Transistor
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NSS20200LT1G, NSV20200LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −7.0 Vdc)
V(BR)CEO
−20
−
Vdc
−
V(BR)CBO
−20
−
Vdc
−
V(BR)EBO
−7.0
−
Vdc
−
ICBO
−
mAdc
−
−0.1
IEBO
−
mAdc
−
−0.1
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
250
250
180
150
VCE(sat)
−
−
−
−
VBE(sat)
−
VBE(on)
−
fT
100
Cibo
−
Cobo
−
−
300
−
−
−0.008
−0.065
−0.100
−0.130
−
−
−
−
−
−
−
−
−
−0.013
−0.090
−0.120
−0.180
−0.900
−0.900
−
330
100
V
V
V
MHz
pF
pF
Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
60
ns
Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
120
ns
Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
300
ns
Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
130
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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