NSBA123TDP6 Datasheet, PDF(3/5 Page) ON Semiconductor – Dual PNP Bias Resistor Transistors

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NSBA123TDP6 Datasheet, PDF (3/5 Pages) ON Semiconductor – Dual PNP Bias Resistor Transistors

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NSBA123TDP6

ELECTRICAL CHARACTERISTICS (TA = 25ï°C, common for Q1 and Q2, unless otherwise noted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

Collector-Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

Collector-Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

Collector-Emitter Breakdown Voltage (Note 4)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = 5.0 mA, VCE = 10 V)

hFE

160

350

Collector-Emitter Saturation Voltage (Note 4)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

Input Voltage (Off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

0.6

Input Voltage (On)

(VCE = 0.2 V, IC = 10 mA)

Vi(on)

0.9

Output Voltage (On)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

Output Voltage (Off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

Input Resistor

1.5

2.2

Resistor Ratio

4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ï£ 2%.

R1/R2

Max

Unit

nAdc

100

nAdc

500

mAdc

4.0

Vdc

0.25

Vdc

0.2

Vdc

2.9

250

200

(1)

150

100

(1) SOTâ963; 100 mm2, 1 oz. Copper Trace

â50 â25

0 25 50 75 100 125 150

AMBIENT TEMPERATURE (ï°C)

Figure 1. Derating Curve

http://onsemi.com

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