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NRVTS560ETFS Datasheet, PDF (3/5 Pages) ON Semiconductor – Exceptionally Low Leakage Trench-based Schottky Rectifier | |||
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NRVTS560ETFS, NRVTS560ETFSWF
TYPICAL CHARACTERISTICS
100
100
10
TA = 150°C
TA = 125°C
TA = 175°C
TA = 175°C
10
TA = 150°C
TA = 125°C
1
TA = 85°C
0.1
0
TA = 25°C
TA = â55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1
TA = 85°C
TA = 25°C
TA = â55°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.Eâ01
1.Eâ02
1.Eâ03
1.Eâ04
1.Eâ05
1.Eâ06
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1.Eâ01
1.Eâ02
1.Eâ03
1.Eâ04
1.Eâ05
TA = 175°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1.Eâ07
5 10 15 20 25 30 35 40 45 50 55 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.Eâ06
5 10 15 20 25 30 35 40 45 50 55 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0.2
2
20
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
9
8
DC
7
6
Square Wave
5
4
3
2
RqJC = 2.6°C/W
1
0
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Device
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