NRVBM120LT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G
10E−3
100E−3
1.0E−3
100E−6
T_J = 85C
10E−3
1.0E−3
T_J = 85C
10E−6
1.0E−6
0
T_J = 25C
5.0
10
15
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
100E−6
10E−6
20
0
T_J = 25C
5.0
10
15
20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
1.8
1.6
dc
FREQ = 20 kHz
1.4
1.2
SQUARE WAVE
1.0
I_pk/I_o = p
0.8
I_pk/I_o = 5
0.6
0.4
I_pk/I_o = 10
I_pk/I_o = 20
0.2
0
25 35 45 55 65 75 85 95 105 115 125
T_L, LEAD TEMPERATURE (C)
Figure 5. Current Derating
0.7
0.6
SQUARE
0.5
I_pk/I_o = p
I_pk/I_o = 5
WAVE
dc
I_pk/I_o = 10
0.4
I_pk/I_o = 20
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I_O, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
1000
125
115
T_J = 25C
105
R_tja = 33.72C/W
100
95
119C/W
85
75
204C/W _{277.35C/W 338C/W}
10
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
65
0 2.0 4.0 6.0 8.0 10 12 14 16 18 20
V_R, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T_J therefore must include forward and reverse power effects. The allowable operating
T_J may be calculated from the equation:
T_J = T_Jmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T_J due to reverse bias under DC conditions only and is calculated as T_J = T_Jmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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