NOA1212_15 Datasheet, PDF (3/8 Pages) ON Semiconductor – Ambient Light Sensor

NOA1212
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < T_A < 85°C)
Rating
Test Conditions
Symbol
Min
Typ
Max
Unit
Power supply voltage
V_DD
2
Power supply current
V_DD = 3.0 V, Ev = 0 lux, H−Gain
I_{DD_0}
6
Power supply current
V_DD = 3.0 V, Ev = 100 lux, H−Gain
I_{DD_100}
32
Power down current
All light levels
I_{DD_PD}
Output current, high−gain
Ev = 100 lux, White LED
I_{o_high}
41
Dark output current, high−gain
V_DD = 3.0 V, Ev = 0 lux
I_{o_dark}
Wavelength of maximum
l_m
response
3.0
5.5
V
8
12
mA
64
96
mA
0.2
5
nA
51
61.5
mA
10
nA
540
nm
White LED/fluorescent current
ratio
Ev = 100 lux
r_LE
1.0
Incandescent/fluorescent
current ratio
Ev = 100 lux
r_IF
1.45
Maximum output voltage
Ev = 100 lux, R_L = 220 kW, H−Gain
V_OMAX
V_DD–0.4 V_DD–0.1
V_DD
V
Power down time
Ev = 100 lux, H−Gain to PD
t_PD
1.5
ms
Wake up time
Ev = 100 lux, PD to H−Gain
t_wu
300
ms
Low level input voltage
V_IL
−0.2
0.25 V_DD
V
High level input voltage
V_IH
0.75 V_DD
V_DD+0.2
V
Operating free−air temperature
range
T_A
−40
85
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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