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NLU1GT32_16 Datasheet, PDF (3/7 Pages) ON Semiconductor – Single 2-Input OR Gate, TTL Level
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NLU1GT32
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
Parameter
Low−Level Input
Voltage
VIL
Low−Level Input
Voltage
VOH
High−Level Output
Voltage
VOL
Low−Level Output
Voltage
IIN
ICC
ICCT
IOPD
Input Leakage
Current
Quiescent Supply
Current
Quiescent Supply
Current
Output Leakage
Current
Conditions
VIN = VIH or VIL
IOH = −50 mA
VIN = VIH or VIL
IOH = −2 mA
IOH = −4 mA
IOH = −8 mA
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOL = 2 mA
IOL = 4 mA
IOL = 8 mA
0 v VIN v 5.5 V
0 v VIN v VCC
VIN = 3.4 V
VOUT = 5.5 V
VCC (V)
1.8
3.0
4.5 to 5.5
1.8
3.0
4.5 to 5.5
3.0
4.5
1.8
3.0
4.5
3.0
4.5
1.8
3.0
4.5
0 to 5.5
5.5
5.5
0.0
TA = 25 5C
Min Typ Max
1.2
1.4
2.0
0.3
0.53
0.8
2.9 3.0
4.4 4.5
1.40
2.58
3.94
0
0.1
0
0.1
0.36
0.36
0.36
±0.1
2.0
1.35
0.5
TA = +855C
Min Max
1.2
1.4
2.0
0.3
0.53
0.8
2.9
4.4
1.38
2.48
3.80
0.1
0.1
0.44
0.44
0.44
±1.0
20
1.50
5.0
TA = −555C
to +1255C
Min Max
1.2
1.4
2.0
0.3
0.53
0.8
2.9
4.4
1.37
2.34
3.66
0.1
0.1
0.52
0.52
0.52
±1.0
40
1.65
10
Unit
V
V
V
V
mA
mA
mA
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
tPLH,
tPHL
Parameter
Propagation Delay, Input
A or B to Y
CIN
Input Capacitance
CPD
Power Dissipation
Capacitance (Note 3)
VCC (V)
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
Test
Condition
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
5.0
TA = 25 5C
Min Typ Max
15.4
23.8
10.4
14.5
4.8 7.9
6.1 11.4
3.7 5.5
4.4 7.5
5.5 10
11
TA = +855C
Min Max
16.9
25.2
11.2
15.5
9.5
13.0
6.5
8.5
10
TA = −555C
to +1255C
Min Max Unit
18.7 ns
26.7
13.2
17.9
11.5
15.5
8.0
10.0
10.0 pF
pF
3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.
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