NLU1G07_16 Datasheet, PDF (3/7 Pages) ON Semiconductor – Single Non-Inverting Buffer with Open Drain Output

NLU1G07
DC ELECTRICAL CHARACTERISTICS
Symbol
V_IH
Parameter
Low−Level Input
Voltage
Conditions
V_IL
Low−Level Input
Voltage
V_OL
I_LKG
I_IN
I_OFF
I_CC
Low−Level
Output Voltage
V_IN = V_IH or V_IL
I_OL = 50 mA
Z−State Output
Leakage Current
Input Leakage
Current
Power off Input
Leakage Current
Quiescent Supply
Current
V_IN = V_IH or V_IL
I_OL = 4 mA
I_OL = 8 mA
V_IN = V_IH, V_OUT
= V_CC or GND
0 = V_IN = 5.5 V
0 v V_IN,
V_OUT = 5.5 V
0 v V_IN v V_CC
V_CC
(V)
1.65
2.3 to
5.5
1.65
2.3 to
5.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to
5.5
0.0
5.5
T_A = 25 5C
Min Typ Max
0.75 x
V_CC
0.70 x
V_CC
0.25 x
V_CC
0.30 x
V_CC
0
0.1
0
0.1
0
0.1
T_A = +855C
Min
Max
0.75 x
V_CC
0.70 x
V_CC
0.25 x
V_CC
0.30 x
V_CC
0.1
0.1
0.1
T_A = −555C
to +1255C
Min Max
0.25 x
V_CC
0.30 x
V_CC
0.1
0.1
0.1
Unit
V
V
V
0.36
0.36
±0.25
0.44
0.52
0.44
0.52
±2.5
±5.0
mA
±0.1
±1.0
±1.0
mA
0.25
2.5
5
mA
1.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS (Input t_r = t_f = 3.0 ns)
Symbol
Parameter
V_CC
T_A = 25 5C
(V)
Test Condition
Min Typ Max
T_A = +855C
Min
Max
T_A = −555C
to +1255C
Min Max
Unit
t_PZL
Output Enable
Time, Input A to
Output Y
3.0 to
3.6
R_L = R₁ = 50 W,
C_L = 15 pF
R_L = R₁ = 50 W,
C_L = 50 pF
5.0 7.1
7.5 10.6
8.5
10.0
ns
12.0
14.5
4.5 to
5.5
R_L = R₁ = 50 W,
C_L = 15 pF
3.8 5.5
6.5
8.0
R_L = R₁ = 50 W,
C_L = 50 pF
5.3 7.5
8.5
10.0
t_PLZ
Output Disable
Time
3.0 to
3.6
R_L = R₁ = 50 W,
C_L = 50 pF
7.5 10.6
12.0
14.5
ns
4.5 to
5.5
R_L = R₁ = 50 W,
C_L = 50 pF
5.3 7.5
8.5
10.0
C_IN
Input Capacitance
C_PD
Power Dissipation
5.0
Capacitance
(Note 6)
4
10
18
10
10.0 pF
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I_CC(OPR) = C_PD • V_CC • f_in + I_CC. C_PD is used to determine the no−load
dynamic power consumption: P_D = C_PD • V_CC2 • f_in + I_CC • V_CC.
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