NBXSBA045 Datasheet, PDF (3/6 Pages) ON Semiconductor – 2.5/3.3 V, 345.00 MHz LVPECL Clock Oscillator

NBXSBA045
Table 5. DC CHARACTERISTICS (V_DD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, T_A = −40°C to +85°C) (Note 2)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
I_DD
Power Supply Current
95
105
mA
V_IH
OE Input HIGH Voltage
2000
V_DD
mV
V_IL
OE Input LOW Voltage
GND − 300
800
mV
I_IH
Input HIGH Current
OE
−100
+100
mA
I_IL
Input LOW Current
OE
−100
+100
mA
V_OH
Output HIGH Voltage
V_DD−1195
V_DD−945
mV
V_OL
Output LOW Voltage
V_DD−1945
V_DD−1600
mV
V_OUTPP
Output Voltage Amplitude
700
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 W to V_DD − 2.0 V. See Figure 4.
Table 6. AC CHARACTERISTICS (V_DD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, T_A = −40°C to +85°C) (Note 3)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
f_CLKOUT
Df
Output Clock Frequency
Frequency Stability − NBXSBA045
(Note 4)
345.00
±50
F_NOISE
Phase−Noise Performance
f_CLKout = 345.00 MHz
(See Figure 3)
100 Hz of Carrier
1 kHz of Carrier
10 kHz of Carrier
−100
−113
−121
Units
MHz
ppm
dBc/Hz
dBc/Hz
dBc/Hz
100 kHz of Carrier
−121
dBc/Hz
1 MHz of Carrier
−128
dBc/Hz
10 MHz of Carrier
−155
dBc/Hz
t_jit(F)
t_jitter
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
12 kHz to 20 MHz
1000 Cycles
1000 Cycles
0.4
0.7
ps
1.5
8
ps
15
30
ps
Period, RMS
10,000 Cycles
1
4
ps
Period, Peak−to−Peak
10,000 Cycles
10
20
ps
t_OE/OD
t_{DUTY_CYCLE}
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
200
ns
48
50
52
%
t_R
Output Rise Time (20% and 80%)
250
400
ps
t_F
Output Fall Time (80% and 20%)
250
400
ps
t_start
Start−up Time
Aging
1^st Year
1
5
ms
3
ppm
Every Year After 1^st
1
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 W to V_DD − 2.0 V. See Figure 4.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
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