NBXDPA019 Datasheet, PDF (3/7 Pages) ON Semiconductor – 2.5 V / 3.3 V, 125 MHz / 250MHz LVDS Clock 250MHz LVDS Clock

NBXDPA019
Table 6. DC CHARACTERISTICS (V_DD = 2.5 V ± 5% or V_DD = 3.3 V ± 10%, GND = 0 V, T_A = −40°C to +85°C) (Note 2)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
I_DD
Power Supply Current
V_IH
OE and FSEL Input HIGH Voltage
V_IL
OE and FSEL Input LOW Voltage
I_IH
Input HIGH Current
OE
FSEL
78
2000
GND − 300
−100
−100
105
mA
V_DD
mV
800
mV
+100
mA
+100
I_IL
Input LOW Current
OE
FSEL
−100
−100
+100
mA
+100
DV_OD
Change in Magnitude of V_OD for
Complementary Output States
(Note 3)
0
1
25
mV
V_OS
DV_OS
Offset Voltage
Change in Magnitude of V_OS for
Complementary Output States
(Note 3)
1125
1375
mV
0
1
25
mV
V_OH
Output HIGH Voltage
V_DD = 2.5 V
V_DD = 3.3 V
1425
1600
mV
V_OL
Output LOW Voltage
V_DD = 2.5 V
900
1075
mV
V_DD = 3.3 V
V_OD
Differential Output Voltage
250
450
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 5.
3. Parameter guaranteed by design verification not tested in production.
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