NBXDBA019 Datasheet, PDF (3/6 Pages) ON Semiconductor – Clock Oscillator

NBXDBA019, NBXHBA019, NBXSBA019
Table 6. DC CHARACTERISTICS (V_DD = 3.3 V ± 10%, GND = 0 V, T_A = −40°C to +85°C) (Note 2)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
I_DD
Power Supply Current
V_IH
OE and FSEL Input HIGH Voltage
V_IL
OE and FSEL Input LOW Voltage
I_IH
Input HIGH Current
OE
FSEL
78
2000
GND − 300
−100
−100
100
mA
V_DD
mV
800
mV
+100
mA
+100
I_IL
Input LOW Current
OE
FSEL
−100
−100
+100
mA
+100
V_OH
Output HIGH Voltage
V_DD = 3.3 V
V_DD−1195
2105
V_DD−945
mV
2355
V_OL
Output LOW Voltage
V_DD = 3.3 V
V_DD−1945
1355
V_DD−1600
mV
1700
V_OUTPP
Output Voltage Amplitude
660
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to V_DD−2 V. See Figure 5.
Table 7. AC CHARACTERISTICS (V_DD = 3.3 V ± 10%, GND = 0 V, T_A = −40°C to +85°C) (Note 3)
Symbol
Characteristic
Conditions
Min.
Typ.
Max.
Units
f_CLKOUT
Output Clock Frequency
FSEL = HIGH
FSEL = LOW
125
MHz
250
Df
Frequency Stability −
NBXDBA019/NBXSBA019/NBXHBA019
(Note 4)
±50
ppm
F_NOISE
Phase−Noise Performance
f_CLKout = 125 MHz/250 MHz
(See Figures 3 and 4)
100 Hz of Carrier
1 kHz of Carrier
10 kHz of Carrier
−112/−105
−123/−116
−131/−124
dBc/Hz
dBc/Hz
dBc/Hz
100 kHz of Carrier
−131/−124
dBc/Hz
1 MHz of Carrier
−139/−133
dBc/Hz
10 MHz of Carrier
−161/−158
dBc/Hz
t_jit(F)
t_jitter
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
12 kHz to 20 MHz
1000 Cycles
1000 Cycles
0.4
0.9
ps
1
8
ps
7
30
ps
Period, RMS
10,000 Cycles
0.6
4
ps
Period, Peak−to−Peak
10,000 Cycles
5
20
ps
t_OE/OD
t_{DUTY_CYCLE}
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
200
ns
48
50
52
%
t_R
Output Rise Time (20% and 80%)
250
400
ps
t_F
Output Fall Time (80% and 20%)
250
400
ps
t_start
Start−up Time
Aging
1^st Year
1
5
ms
3
ppm
Every Year After 1^st
1
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 ohm to V_DD−2 V. See Figure 5.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
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