NB3N5573DTGEVB Datasheet, PDF (3/8 Pages) ON Semiconductor – 3.3 V, Crystal to 25 MHz, 100 MHz, 125 MHz and 200 MHz Dual HCSL Clock Generator

NB3N5573
Table 3. ATTRIBUTES
Characteristic
ESD Protection
Human Body Model
RPU − OE, S0 and S1 Pull−up Resistor
Moisture Sensitivity, Indefinite Time Out of Dry Pack (Note 1)
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
> 2 kV
100 kW
Level 1
UL 94 V−0 @ 0.125 in
7623
Table 4. MAXIMUM RATINGS (Note 2)
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
V_DD
Positive Power Supply
V_I
Input Voltage (V_IN)
T_A
Operating Temperature Range
T_stg
Storage Temperature Range
q_JA
Thermal Resistance (Junction−to−Ambient)
GND = 0 V
GND = 0 V
0 lfpm
500 lfpm
GND v V_I v V_DD
TSSOP–16
TSSOP–16
4.6
−0.5 V to V_DD+0.5 V
−40 to +85
−65 to +150
138
108
V
V
°C
°C
°C/W
°C/W
q_JC
Thermal Resistance (Junction−to−Case)
(Note 3)
TSSOP−16
33 to 36
°C/W
T_sol
Wave Solder
265
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
Table 5. DC CHARACTERISTICS (V_DD = 3.3 V ±10%, GND = 0 V, T_A = −40°C to +85°C, Note 4)
Symbol
Characteristic
Min
Typ
Max
Unit
VDD
Power Supply Voltage
2.97
3.3
3.63
V
I_DD
I_DDOE
V_IH
V_IL
V_OH
V_OL
V_cross
DV_cross
Power Supply Current
Power Supply Current when OE is Set Low
Input HIGH Voltage (X/CLK, S0, S1, and OE)
Input LOW Voltage (X/CLK, S0, S1, and OE)
Output HIGH Voltage for HCSL Output (See Figure 5)
Output LOW Voltage for HCSL Output (See Figure 5)
Crossing Voltage Magnitude (Absolute) for HCSL Output
Change in Magnitude of V_cross for HCSL Output
120
135
mA
65
mA
2000
GND − 300
V_DD + 300 mV
800
mV
660
700
850
mV
−150
0
150
mV
250
550
mV
150
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
4. Measurement taken with outputs terminated with R_S = 33.2 W, R_L = 49.9 W, with test load capacitance of 2 pF and current biasing resistor
set at 475 W. See Figure 3.
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