MURS360BT3G_16 Datasheet, PDF (3/5 Pages) ON Semiconductor – Surface Mount Ultrafast Power Rectifiers

MURS360BT3G, NRVUS360VBT3G, SURS8360BT3G
TYPICAL CHARACTERISTICS
70
5
dc
60
T_J = 25°C
f = 1 MHz
4
50
Square
40
3
30
2
20
1
10
0
0
0
20
40
60
80
100
65 75 85 95 105 115 125 135 145 155
V_r, REVERSE VOLTAGE (V)
T_C, CASE TEMPERATURE (°C)
Figure 5. Typical Capacitance
Figure 6. Current Derating, Lead
3
dc
2
dc
1
Square Wave
R_qJA = 71°C/W
R_qJA = 120°C/W
No Heatsink
4
T_J = 150°C
3
2
1
Square Wave
dc
0
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 7. Current Derating, Ambient
0
0
1
2
3
4
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Typical Forward Power Dissipation
4
T_J = 150°C
3
2
1
Square Wave
dc
10000
1000
100
0
0
1
2
3
4
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 9. Maximum Forward Power
Dissipation
10
10
100
1,000
10,000
t_p, SQUARE WAVE PULSE DURATION (ms)
Figure 10. Typical Non−Repetitive Surge
Current
*Typical performance based on a limited sample size.
ON Semiconductor does not guarantee ratings not listed
in the Maximum Ratings table.
www.onsemi.com
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