MURD330T4G_13 Datasheet, PDF (3/4 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

MURD330T4G, SURD8330T4G
TYPICAL CHARACTERISTICS
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
0.0
175°C
150°C
25°C
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
175°C
150°C
25°C
1.0E−09
1.0E−10
50
100
150 200
250 300
0.0
50
100 150 200 250 300
V_R, REVERSE VOLTAGE (V)
V_R, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Voltage
Figure 4. Maximum Reverse Voltage
100
10
1.0
0
20 40 60 80 100 120 140 160 180 200
V_R, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
6.0
R_qJC = 2°C/W
5.0
4.0
T_J = 175°C/W
3.0
DC
SQUARE
WAVE
2.0
1.0
0
100 110 120 130 140 150 160 170 180
T_C, CASE TEMPERATURE (°C)
Figure 7. Current Derating, Case
4.0
3.5
3.0
2.5
SQUARE
WAVE
DC
2.0
1.5
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I_o, AVERAGE FORWARD CURRENT
Figure 6. Power Dissipation
6.0
R_qJC = 2°C/W
5.0 _{TJ = 175°C/W}
4.0
DC
3.0
SQUARE
2.0
WAVE
1.0
0
0 20 40 60 80 100 120 140 160 180 200
T_A, AMBIENT TEMPERATURE (°C)
Figure 8. Current Derating, Ambient
http://onsemi.com
3