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MUN5334DW1 Datasheet, PDF (3/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors | |||
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MUN5334DW1, NSBC124XPDXV6
ELECTRICAL CHARACTERISTICS (TA = 25ï°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
â
â
100
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
â
â
500
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
â
â
0.13
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
â
â
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
â
â
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
hFE
80
150
â
Collector-Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
â
â
0.25
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Input Voltage (On)
(VCE = 0.2 V, IC = 3.0 mA) (NPN)
(VCE = 0.2 V, IC = 3.0 mA) (PNP)
Vi(off)
â
0.8
â
â
0.9
â
Vi(on)
â
1.3
â
â
1.3
â
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
â
â
0.2
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
â
â
Input Resistor
R1
15.4
22
28.6
Resistor Ratio
4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ï£ 2%.
R1/R2
0.38
0.47
0.56
400
350
300
250
200
(1) (2)
150
(1) SOTâ363; 1.0 ï´ 1.0 Inch Pad
(2) SOTâ563; Minimum Pad
100
50
0
â50 â25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (ï°C)
Figure 1. Derating Curve
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
V
Vdc
Vdc
Vdc
Vdc
kW
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