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MUN5332DW1_15 Datasheet, PDF (3/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors | |||
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MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS
ICBO
â
ICEO
â
IEBO
â
V(BR)CBO
50
V(BR)CEO
50
â
100
â
500
â
1.5
â
â
â
â
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 1.0 mA)
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Input Voltage (On)
(VCE = 0.2 V, IC = 20 mA) (NPN)
(VCE = 0.2 V, IC = 20 mA) (PNP)
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
Input Resistor
hFE
15
VCE(sat)
â
Vi(off)
â
â
Vi(on)
â
â
VOL
â
VOH
4.9
R1
3.3
30
â
â
0.25
1.2
â
1.2
â
2.4
â
2.8
â
â
0.2
â
â
4.7
6.1
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ⤠2%.
R1/R2
0.8
1.0
1.2
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
V
Vdc
Vdc
Vdc
Vdc
kW
400
350
300
250
200
(1) (2) (3)
150
(1) SOTâ363; 1.0 Ã 1.0 Inch Pad
(2) SOTâ563; Minimum Pad
(3) SOTâ963; 100 mm2, 1 oz. Copper Trace
100
50
0
â50 â25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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