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MUN5316DW1 Datasheet, PDF (3/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors
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MUN5316DW1, NSBC143TPDXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
nAdc
−
−
100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
nAdc
−
−
500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
−
−
1.9
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
Vdc
50
−
−
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
Vdc
50
−
−
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
hFE
160
350
−
Collector−Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
Vdc
−
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Input Voltage (on)
(VCE = 0.2 V, IC = 10 mA) (NPN)
(VCE = 0.2 V, IC = 10 mA) (PNP)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Vi(off)
Vi(on)
VOL
Vdc
−
0.6
−
0.58
Vdc
−
0.9
−
1.0
Vdc
−
−
0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
VOH
Vdc
4.9
−
−
R1
3.3
4.7
6.1
kW
Resistor Ratio
R1/R2
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
400
350
300
(1) SOT−363; 1.0 x 1.0 inch Pad
250
(2) SOT−563; Minimum Pad
200
(1) (2)
150
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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