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MUN5314DW1 Datasheet, PDF (3/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors | |||
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MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
â
â
100
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
â
â
500
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
â
â
0.2
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
â
â
Collector-Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
â
â
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
hFE
80
VCE(sat)
â
140
â
â
0.25
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA) (NPN)
(VCE = 5.0 V, IC = 100 mA) (PNP)
Input Voltage (On)
(VCE = 0.2 V, IC = 1.0 mA) (NPN)
(VCE = 0.2 V, IC = 1.0 mA) (PNP)
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
Vi(off)
â
â
0.7
0.3
0.7
0.3
Vi(on)
1.4
0.8
â
1.4
0.9
â
VOL
â
â
0.2
VOH
4.9
â
â
R1
7.0
10
13
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ⤠2%.
R1/R2
0.17
0.21
0.25
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
V
Vdc
Vdc
Vdc
Vdc
kW
400
350
300
250
200
(1) (2) (3)
150
100
(1) SOTâ363; 1.0 Ã 1.0 Inch Pad
(2) SOTâ563; Minimum Pad
(3) SOTâ963; 100 mm2, 1 oz. Copper Trace
50
0
â50 â25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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