MTB50N06V Datasheet, PDF (3/7 Pages) Motorola, Inc – TMOS POWER FET 42 AMPERES 60 VOLTS

MTB50N06V
TYPICAL ELECTRICAL CHARACTERISTICS
100
T_J = 25°C
80
60
40
20
V_GS = 10 V
9V
8V
7V
6V
5V
0
0
0.8
1.6
2.4
3.2
4
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
100
V_DS ≥ 10 V
80
60
40
100°C
25°C
T_J = − 55°C
20
0
1
2
3
4
5
6
7
8
9
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.04
V_GS = 10 V
0.034
0.028
0.022
T_J = 100°C
25°C
0.016
− 55°C
0.01
0
20
40
60
80
100
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.033
T_J = 25°C
0.03
0.027
0.024
V_GS = 10 V
15 V
0.021
0
20
40
60
80
100
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
V_GS = 10 V
2 ^{ID = 21 A}
1.5
1
0.5
1000
V_GS = 0 V
100
10
T_J = 125°C
100°C
25°C
0
− 50 − 25
0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
10
20
30
40
50
60
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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