MMVL2105T1 Datasheet, PDF (3/4 Pages) ON Semiconductor – Silicon Tuning Diode

MMVL2105T1
TYPICAL DEVICE CHARACTERISTICS
1000
500
T_A = 25°C
200
f = 1.0 MHz
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
20
30
1.040
1.030
V_R = 2.0 Vdc
1.020
1.010
V_R = 4.0 Vdc
1.000
0.990
0.980
0.970
V_R = 30 Vdc
NORMALIZED TO C_T
at T_A = 25°C
V_R = (CURVE)
0.960
−75 −50 −25 0 +25 +50 +75 +100 +125
T_J, JUNCTION TEMPERATURE (°C)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
100
50
T_A = 125°C
20
10
5.0
2.0
T_A = 75°C
1.0
0.50
0.20
T_A = 25°C
0.10
0.05
0.02
0.01 ₀
5.0
10
15
20
25
30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
10,000
1000
1000
100
100
0.1
T_A = 25°C
f = 50 MHz
1.0
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus Reverse Voltage
T_A = 25°C
V_R = 4.0 Vdc
10
10
100
1000
f, FREQUENCY (MHz)
Figure 5. Figure of Merit versus Frequency
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