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| MMBZ16V Datasheet, PDF (3/7 Pages) ON Semiconductor – 40 Watt Peak Power Zener Transient Voltage Suppressors | |||
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MMBZ16V, SZMMBZ16V
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
ZZT
IZK
ZZK
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS
Device*
Device
Marking
VRWM
Volts
IR @
VRWM
nA
Breakdown Voltage
VBR (Note 4) (V)
Min Nom Max
@ IT
mA
MMBZ16VALT1G
16A
13
50 15.20 16 16.80 1.0
VC @ IPP (Note 5)
VC
IPP
V
A
23
1.7
QVBR
mV/5C
13.8
(VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS
Device*
Device
Marking
VRWM
Volts
IR @
VRWM
nA
Breakdown Voltage
VBR (Note 4) (V)
Min Nom Max
@ IT
mA
VC @ IPP (Note 5)
VC
IPP
V
A
QVBR
mV/5C
MMBZ16VTALT1G
16T
13
50 15.68 16 16.32 1.0
23
1.7
13.8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
* Include SZ-prefix devices where applicable.
http://onsemi.com
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