MMBZ15VDLT1 Datasheet, PDF (3/8 Pages) ON Semiconductor – 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ15VDLT1, MMBZ27VCLT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V_F = 0.9 V Max @ I_F = 10 mA)
Breakdown Voltage
Device
Device
Marking
V_RWM
Volts
I_R @ V_RWM
nA
V_BR (Note 4.) (V)
Min Nom Max
@ I_T
mA
MMBZ15VDLT1
15D
12.8
100
14.3
15
15.8
1.0
(V_F = 1.1 V Max @ I_F = 200 mA)
Breakdown Voltage
Device
Device
Marking
V_RWM
Volts
I_R @ V_RWM
nA
V_BR (Note 4.) (V)
Min Nom Max
@ I_T
mA
MMBZ27VCLT1
27C
22
50
25.65 27 28.35 1.0
4. V_BR measured at pulse test current I_T at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5. and derate per Figure 6.
V_C @ I_PP (Note 5.)
V_C
I_PP
V
A
21.2
1.9
V_C @ I_PP (Note 5.)
V_C
I_PP
V
A
38
1.0
QV_BR
mV/5C
12
QV_BR
mV/5C
26
TYPICAL CHARACTERISTICS
MMBZ15VDLT1
17
BIDIRECTIONAL
16
MMBZ27VCLT1
29
BIDIRECTIONAL
28
15
27
14
UNIDIRECTIONAL
13
-ā40
+ā25
+ā85
+ā125
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
26
25
-ā55
+ā25
+ā85
+ā125
TEMPERATURE (°C)
Figure 2. Typical Breakdown Voltage
versus Temperature
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