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MMBTA56W Datasheet, PDF (3/5 Pages) ON Semiconductor – Driver Transistor
MMBTA56W, SMMBTA56W
200
VCE = -2.0 V
TJ = 25°C
100
70
50
30
20
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain — Bandwidth Product
100
70
TJ = 25°C
50
Cibo
30
20
10
7.0
5.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Cobo
-50 -100
1.0 k
700
500
ts
300
200
100
70
50
30
VCC = -40 V
IC/IB = 10
20 IB1 = IB2
TJ = 25°C
10
-5.0 -7.0 -10
td @ VBE(off) = -0.5 V
-20 -30 -50 -70 -100
tf
tr
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
-1.0 k
-700
-500
-300
-200
-100
-70
-50
-30
-20
TA = 25°C
100 ms
1.0 ms
1.0 s
TC = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-10
-1.0
-2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
400
TJ = 125°C
200
25°C
VCE = -1.0 V
-55°C
100
80
60
40
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
-1.0
TJ = 25°C
-0.8
VBE(sat) @ IC/IB = 10
-0.6
VBE(on) @ VCE = -1.0 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
Figure 7. “ON” Voltages
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