MMBT4401WT1G Datasheet, PDF (3/6 Pages) ON Semiconductor – Switching Transistor

MMBT4401WT1G
TRANSIENT CHARACTERISTICS
25C
100C
30
10
7.0
20
5.0
V_CC = 30 V
I_C/I_B = 10
C_obo
3.0
2.0
Q_T
10
1.0
7.0
0.7
5.0
0.5
C_cb
0.3
3.0
0.2
Q_A
2.0
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
20 30 50
0.1
10
20 30 50 70 100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100
70
50
30
20
10
7.0
5.0
10
I_C/I_B = 10
t_r @ V_CC = 30 V
t_r @ V_CC = 10 V
t_d @ V_EB = 2.0 V
t_d @ V_EB = 0
20 30 50 70 100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 5. Turn--On Time
100
70
t_r
50
30
t_f
20
V_CC = 30 V
I_C/I_B = 10
10
7.0
5.0
10
20 30 50 70 100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 6. Rise and Fall Times
300
200
100
70
50
30
10
t_s = t_s - 1/8 t_f
I_B1 = I_B2
I_C/I_B = 10 to 20
20 30 50 70 100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
100
70
V_CC = 30 V
I_B1 = I_B2
50
I_C/I_B = 20
30
20
I_C/I_B = 10
10
7.0
5.0
10
20 30 50 70 100
200 300 500
I_C, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
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