MMBT4401M3T5G Datasheet, PDF (3/5 Pages) ON Semiconductor – NPN Switching Transistor

500
450
T_J = 150°C
400
350
25°C
300
250
200 _{- 55°C}
150
100
50
0
0.01
MMBT4401M3T5G
V_CE = 5.0 V
V_CE = 2.0 V
V_CE = 1.0 V
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
1.2
1.0
0.8
I_C = 1.0 mA
0.6
10 mA
100 mA
300 mA
500 mA
0.4
0.2
0
0.001
0.01
0.1
1
I_B, BASE CURRENT (mA)
10
100
Figure 4. Collector Saturation Region
0.35
I_C/I_B = 10
0.30
0.25
150°C
0.20
0.15
25°C
0.10
-55°C
0.05
0
0.0001
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
vs. Collector Current
+ 0.5
0
q_VC for V_CE(sat)
- 0.5
- 1.0
- 1.5
- 2.0
q_VB for V_BE
- 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
I_C, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
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