MMBT2369LT1_07 Datasheet, PDF (3/6 Pages) ON Semiconductor – Switching Transistors NPN Silicon

MMBT2369LT1, MMBT2369ALT1
+10.6 V
0
−1.5 V
t₁
< 1 ns
PULSE WIDTH (t₁) = 300 ns
DUTY CYCLE = 2%
270 W
3V
3.3 k
C_s* < 4 pF
+10.75 V
t₁
0
−9.15 V
< 1 ns
PULSE WIDTH (t₁) = 300 ns
DUTY CYCLE = 2%
270 W
3.3 k
*Total shunt capacitance of test jig and connectors.
Figure 1. t_on Circuit − 10 mA
Figure 2. t_off Circuit − 10 mA
C_s* < 4 pF
+10.8 V
t₁
95 W
10 V
0
−2 V
< 1 ns
1k
PULSE WIDTH (t₁) = 300 ns
DUTY CYCLE = 2%
C_s* < 12 pF
+11.4 V
t₁
95 W
10 V
0
−8.6 V
< 1 ns
PULSE WIDTH (t₁) BETWEEN
10 AND 500 ms
DUTY CYCLE = 2%
1k
1N916
*Total shunt capacitance of test jig and connectors.
C_s* < 12 pF
Figure 3. t_on Circuit − 100 mA
Figure 4. t_off Circuit − 100 mA
TURN−ON WAVEFORMS
V_in
0
10%
t_on
V_{out 90%}
V_in
PULSE GENERATOR
V_in RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 W
PW ≥ 300 ns
DUTY CYCLE < 2%
3.3 kW
50 W
220 W
0.1 mF
3.3 k
50 W
0.0023 mF 0.0023 mF
0.005 mF 0.005 mF
V_BB
+
−
0.1 mF
0.1 mF
+
−
V_CC
=
3
V
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 W
RISE TIME = 1 ns
V_out
TURN−OFF WAVEFORMS
0
V_in
10%
V_out
90%
V_BB = +12 V
t_off V_in = −15 V
Figure 5. Turn−On and Turn−Off Time Test Circuit
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