MJW21195_06 Datasheet, PDF (3/7 Pages) ON Semiconductor – 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
NPN MJW21196
6.5
7.5
6.0
V_CE = 10 V
5.5
7.0
6.5
V_CE = 10 V
6.0
5.0
4.5
V_CE = 5 V
5.5
5.0
V_CE = 5 V
4.5
4.0
4.0
3.5
3.5
3.0
T_J = 25°C
f_test = 1 MHz
2.5
3.0
2.5 ^{TJ = 25°C}
2.0 ^{ftest = 1 MHz}
1.5
2.0
1.0
0.1
1.0
10
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Figure 2. Typical Current Gain
Bandwidth Product
Bandwidth Product
PNP MJW21195
1000
NPN MJW21196
1000
T_J = 100°C
100
25°C
−25 °C
V_CE = 20 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, V_CE = 20 V
100
T_J = 100°C
25°C
−25 °C
V_CE = 20 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, V_CE = 20 V
PNP MJW21195
1000
NPN MJW21196
1000
T_J = 100°C
100
25°C
−25 °C
V_CE = 5 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, V_CE = 5 V
100
T_J = 100°C
25°C
−25 °C
V_CE = 5 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, V_CE = 5 V
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