MJH11017 Datasheet, PDF (3/6 Pages) Motorola, Inc – 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022
1.0
0.7 _{D = 0.5}
0.5
0.3 _0.2
0.2
0.1
0.1 _0.05
0.07 _0.02
0.05
0.03
0.01
0.02 SINGLE PULSE
R_θJC(t) = r(t) R_θJC
R_θJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
t, TIME (ms)
20 30 50 100 200 300 500 1000
Figure 3. Thermal Response
TC = 25°C SINGLE PULSE
30
20
0.1 ms
10
0.5 ms
5.0
1.0 ms
5.0 ms
2.0
dc
WIRE BOND LIMIT
1.0
THERMAL LIMIT
0.5
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
0.2
MJH11019, MJH11020
MJH11021, MJH11022
0
2.0 3.0 5.0 10 20 30 50 100 150 250
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
30
L = 200 µH
IC/IB1 ≥ 50
20 ^{TC = 100°C}
VBE(off) = 0 – 5.0 V
RBE = 47 Ω
DUTY CYCLE = 10%
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
60 100 140 180 220 260
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150 _C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 5 gives RBSOA characteristics.
Motorola Bipolar Power Transistor Device Data
3