MJF44H11_06 Datasheet, PDF (3/5 Pages) ON Semiconductor – SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS

MJF44H11 (NPN), MJF45H11 (PNP)
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
T_C ≤ 70° C
dc
DUTY CYCLE ≤ 50%
1.0 ms
100 ms
10 ms
1.0 ms
MJF44H11/MJF45H11
2.0 3.0 5.0 7.0 10
20 30 50 70 100
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T_J(pk) = 150°C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T_J(pk) v 150°C. T_J(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
T_A T_C
3.0 60
2.0 40
T_A
1.0 20
T_C
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Power Derating
http://onsemi.com
3