MJE200 Datasheet, PDF (3/6 Pages) Motorola, Inc – 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.02
0.05
0.01
0.03 0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
0.2
MJE200 MJE210
θ_JC(t) = r(t) θ_JC
θ_JC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θ_JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100
200
10
7.0
1.0 ms
500 µs
100 µs
5.0
3.0
dc
5.0 ms
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
2.0 3.0
5.0 7.0 10
20 30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150 _C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
5K
3K
ts
VCC = 30 V
IC/IB = 10
2K
IB1 = IB2
1K
TJ = 25°C
500
300
200
100
tf
50
30 ^MJE200
20 ^MJE210
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
2 3 5 10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn–Off Time
200
TJ = 25°C
Cib
100
70
50
Cob
30
MJE200 (NPN)
MJE210 (PNP)
20
0.4 0.6 1.0
2.0
4.0 6.0 10 20
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data
3