MJD253-001 Datasheet, PDF (3/8 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

MJD243 (NPN), MJD253 (PNP)
T_A T_C
2.5 25
2 20
1.5 15
1 10
0.5 5
00
25
T_A (SURFACE MOUNT)
T_C
50
75
100
125
T, TEMPERATURE (°C)
Figure 1. Power Derating
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
150
1
500 ms
100 ms
1 ms
5 ms
dc
BONDING WIRE LIMITED
THERMALLY LIMITED @ T_C = 25°C
 (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V_CEO
2
5
10
20
50 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active Region Maximum
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T_J(pk) = 150°C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
≤ 150°C. T_J(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.02
0.01
0.03
0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
0.2
R_qJC(t) = r(t) q_JC
R_qJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5
1
2
5
10
20
t, TIME (ms)
Figure 3. Thermal Response
50
100
200
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