MGW12N120D Datasheet, PDF (3/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MGW12N120D
ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
Reverse Recovery Stored Charge
Reverse Recovery Time
(IF = 10 Adc, VR = 720 Vdc,
dIF/dt = 100 A/µs)
(IF = 10 Adc, VR = 720 Vdc,
dIF/dt = 100 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
trr
ta
tb
QRR
trr
ta
tb
QRR
LE
—
116
—
ns
—
69
—
—
47
—
—
0.36
—
µC
—
234
—
ns
—
149
—
—
85
—
—
1.40
—
µC
nH
—
13
—
TYPICAL ELECTRICAL CHARACTERISTICS
40
TJ = 25°C
VGE = 20 V
40
TJ = 125°C
VGE = 20 V
30
17.5 V
20
15 V
12.5 V
10
7.5 V
0
01
2
3
4
5
67
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
30
17.5 V
20
15 V
12.5 V
10
10 V
0
01
2
3
4
5
67
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
24
VCE = 10 V
250 µs PULSE WIDTH
20
16
12
TJ = 125°C
8
25°C
4
0
5
7
9
11
13
15
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
3.8
3.6
IC = 10 A
3.4
3.2
7.5 A
3.0
2.8
2.6
5A
2.4
2.2
VGE = 15 V
250 µs PULSE WIDTH
2
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
Motorola IGBT Device Data
3