MCR72-008 Datasheet, PDF (3/7 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

MCR72−3, MCR72−6, MCR72−8
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs
Symbol
R_qJC
R_qJA
T_L
Max
Unit
2.2
°C/W
60
°C/W
260
°C
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
(V_AK = Rated V_DRM or V_RRM; R_GK = 1 kW)
High Logic Level Supply Current from V_CC
ON CHARACTERISTICS
T_J = 25°C
T_J = 110°C
I_DRM, I_RRM
−
−
10
mA
−
−
500
mA
I_CCH
4
4
mA
mA
Peak Forward On-State Voltage
(I_TM = 16 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
V_TM
−
1.7 2.0
V
Gate Trigger Current (Continuous dc) (Note 3)
(V_D = 12 V, R_L = 100 W)
I_GT
−
30 200
mA
Gate Trigger Voltage (Continuous dc) (Note 3)
(V_D = 12 V, R_L = 100 W)
Gate Non−Trigger Voltage
(V_D = 12 Vdc, R_L = 100 W, T_J = 110°C)
Holding Current
(V_D = 12 V, Initiating Current = 200 mA, R_GK = 1 kW)
Gate Controlled Turn-On Time
(V_D = Rated V_DRM, I_TM = 16 A, I_G = 2 mA)
DYNAMIC CHARACTERISTICS
V_GT
−
0.5 1.5
V
V_GD
0.1
−
−
V
I_H
−
−
6.0
mA
t_gt
−
1.0
−
ms
Critical Rate-of-Rise of Off-State Voltage
(V_D = Rated V_DRM, R_GK = 1 kW, T_J = 110°C, Exponential Waveform)
dv/dt
−
10
−
V/ms
2. Ratings apply for negative gate voltage or R_GK = 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
3. R_GK current not included in measurement.
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