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MC74VHCT257A_11 Datasheet, PDF (3/8 Pages) ON Semiconductor – Quad 2-Channel Multiplexer with 3-State Outputs | |||
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MC74VHCT257A
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Positive DC Supply Voltage
Digital Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air
â0.5 to +7.0
V
â0.5 to +7.0
V
Output in 3âState
â0.5 to +7.0
V
High or Low State
â0.5 to VCC +0.5
â20
mA
$20
mA
$25
mA
$75
mA
SOIC Package
200
mW
TSSOP
180
TSTG
VESD
Storage Temperature Range
ESD Withstand Voltage
â65 to +150
°C
Human Body Model (Note 1)
>2000
V
Machine Model (Note 2)
>200
Charged Device Model (Note 3)
>2000
ILATCHUP
qJA
Latchup Performance
Above VCC and Below GND at 125°C (Note 4)
Thermal Resistance, JunctionâtoâAmbient
SOIC Package
TSSOP
$300
143
164
mA
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22âA114âA
2. Tested to EIA/JESD22âA115âA
3. Tested to JESD22âC101âA
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
VCC
VIN
VOUT
TA
tr, tf
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range, all Package Types
Input Rise or Fall Time
Min
4.5
0
0
â55
VCC = 5.0 V + 0.5 V
0
Max
Unit
5.5
V
5.5
V
5.5
V
125
°C
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO
0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 4. Failure Rate vs. Time Junction Temperature
http://onsemi.com
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