MC74VHCT132A_06 Datasheet, PDF (3/6 Pages) ON Semiconductor – Quad 2−Input NAND Schmitt Trigger

MC74VHCT132A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC DC Supply Voltage
– 0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Vin ^{DC Input Voltage}
– 0.5 to + 7.0
V
V_out DC Output Voltage
– 0.5 to V_CC + 0.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{IIK Input Diode Current}
− 20
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{IOK Output Diode Current}
± 20
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Iout DC Output Current, per Pin}
± 25
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC DC Supply Current, VCC and GND Pins}
± 50
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{PD Power Dissipation in Still Air,}
SOIC Packages†
500
mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TSSOP Package†
450
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ T_stg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Maximum ratings are those values beyond which device damage can occur. Maximum ratings}
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating − SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC DC Supply Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin DC Input Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vout DC Output Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA Operating Temperature, All Package Types}
Min
4.5
0
0
− 40
Max
5.5
5.5
V_CC
+ 85
Unit
V
V
V
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC ELECTRICAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VT+ ^{Positive Threshold Voltage}
V_CC
Test Conditions V
3.0
4.5
5.5
T_A = 25°C
Min Typ Max
1.7
2.0
2.0
T_A ≤ 85°C
Min Max
1.6
2.0
2.0
T_A ≤ 125°C
Min Max Unit
1.6 V
2.0
2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VT− NegativeThresholdVoltage}
3.0 0.35
4.5 0.5
6.0 0.6
0.35
0.35
V
0.5
0.5
0.6
0.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VH Hysteresis Voltage}
3.0 0.30
4.5 0.40
5.5 0.50
1.20 0.30 1.20 0.30 1.20 V
1.40 0.40 1.40 0.40 1.40
1.60 0.50 1.60 0.50 1.60
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOH Minimum High−Level Output VIN = VIH or VIL}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Voltage
I_OH = − 50mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{IOH = −50mA}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOH = − 4mA
I_OH = − 8mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOL Maximum Low−Level Output VIN = VIH or VIL}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Voltage
I_OL = 50mA
2.0 1.9 2.0
1.9
1.9
V
3.0 2.9 3.0
2.9
2.9
4.5 4.4 4.5
4.4
4.4
4.5 2.58
5.5 3.94
2.48
2.34
3.80
3.66
2.0
0.0 0.1
0.1
0.1 V
3.0
0.0 0.1
0.1
0.1
4.5
0.0 0.1
0.1
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{IOL = 4mA}
4.5
I_OL = 8mA
5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{IIN Maximum Input Leakage}
V_IN = 5.5V or
0 to
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Current
GND
5.5
0.36
0.36
± 0.1
0.44
0.44
± 1.0
0.52
0.52
± 1.0 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC Maximum Quiescent Supply VIN = VCC or}
5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Current
GND
2.0
20
40 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _ICCT
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOPD
Quiescent Supply Current
Output Leakage Current
Input: V_IN = 3.4V 5.5
V_OUT = 5.5V
0.0
1.35
1.50
1.65 mA
0.5
5.0
10 mA
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