MC74VHC50_11 Datasheet, PDF (3/7 Pages) ON Semiconductor – Hex Buffer

MC74VHC50
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
V_CC
T_A = 25°C
T_A ≤ 85°C
T_A ≤ 125°C
(V) Min Typ Max Min Max Min Max Unit
V_IH
Minimum High−Level
Input Voltage
2.0 1.5
3.0 2.0
4.5 3.15
5.5 3.85
1.5
1.5
V
2.0
2.0
3.15
3.15
3.85
3.85
V_IL
Maximum Low−Level
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V_OH
Minimum High−Level
V_IN = V_IH or V_IL
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
I_OH = −50 mA
3.0 2.9 3.0
2.9
2.9
V_IN = V_IH or V_IL
4.5 4.4 4.5
4.4
4.4
V_IN = V_IH or V_IL
I_OH = −4 mA
I_OH = −8 mA
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
V_OL
Maximum Low−Level
V_IN = V_IH or V_IL
2.0
0.0 0.1
0.1
0.1
V
Output Voltage
I_OL = 50 mA
3.0
0.0 0.1
0.1
0.1
V_IN = V_IH or V_IL
4.5
0.0 0.1
0.1
0.1
V_IN = V_IH or V_IL
I_OL = 4 mA
3.0
I_OL = 8 mA
4.5
V
0.36
0.44
0.52
0.36
0.44
0.52
I_IN
Maximum Input
Leakage Current
V_IN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0 mA
I_CC
Maximum Quiescent
V_IN = V_CC or GND
5.5
2.0
20
40 mA
Supply Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0 ns)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPHL
Maximum
Propogation Delay,
Input A to Y
V_CC = 3.0 ± 0.3 V
V_CC = 5.0 ± 0.5 V
C_L = 15 pF
C_L = 50 pF
C_L = 15 pF
C_L = 50 pF
5.0 7.1
7.5 10.6
3.8 5.5
5.3 7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^CIN
Maximum Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Capacitance
4
10
T_A ≤ 85°C
Min Max
8.5
12.0
6.5
8.5
10
T_A ≤ 125°C
Min Max Unit
10.0 ns
14.5
8.0
10.0
10 pF
Typical @ 25°C, V_CC = 5.0 V
C_PD
Power Dissipation Capacitance (Note 7)
18
pF
7. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
NOISE CHARACTERISTICS (Input t_r = t_f = 3.0 ns, C_L = 50 pF, V_CC = 5.0 V)
Symbol
V_OLP
V_OLV
V_IHD
V_ILD
Characteristic
Quiet Output Maximum Dynamic V_OL
Quiet Output Minimum Dynamic V_OL
Minimum High Level Dynamic Input Voltage
Maximum Low Level Dynamic Input Voltage
T_A = 25°C
Typ
Max
Unit
0.8
1.0
V
−0.8
−1.0
V
3.5
V
1.5
V
http://onsemi.com
3