MC74VHC245_11 Datasheet, PDF (3/8 Pages) ON Semiconductor – Octal Bus Buffer/Line Driver

MC74VHC245
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_CC DC Supply Voltage
– 0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_in DC Input Voltage
– 0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_out DC Output Voltage
– 0.5 to V_CC + 0.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_IK Input Diode Current
− 20
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_OK Output Diode Current
± 20
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_out DC Output Current, per Pin
± 25
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_CC DC Supply Current, V_CC and GND Pins
± 75
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ P_D Power Dissipation in Still Air
SOIC Packages†
500
mW
TSSOP Package†
450
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Tstg Storage Temperature}
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{* Absolute maximum continuous ratings are those values beyond which damage to the device}
may occur. Exposure to these conditions or conditions beyond those indicated may
adversely affect device reliability. Functional operation under absolute−maximum−rated
conditions is not implied.
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC DC Supply Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Vin
DC Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vout DC Output Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _TA
Operating Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tr, tf}
Input Rise and Fall Time
V_CC = 3.3V ±0.3V
V_CC =5.0V ±0.5V
2.0
0
0
− 40
0
0
Max Unit
5.5 V
5.5 V
V_CC
V
+ 85 _C
100 ns/V
20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC ELECTRICAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
V_CC
T_A = 25°C
T_A = − 40 to 85°C
Test Conditions
V
Min
Typ
Max
Min
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VIH
Minimum High−Level
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Input Voltage}
2.0
3.0 to
5.5
1.50
V_CC x 0.7
1.50
V
V_CC x 0.7
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VIL
Maximum Low−Level
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Input Voltage}
2.0
3.0 to
5.5
0.50
V_CC x 0.3
0.50
V
V_CC x 0.3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOH Minimum High−Level Vin = VIH or VIL}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Output Voltage}
I_OH = − 50μA
2.0
1.9
2.0
3.0
2.9
3.0
4.5
4.4
4.5
1.9
V
2.9
4.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin = VIH or VIL}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{IOH=−4mA 3.0}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{IOH=−8mA 4.5}
2.58
3.94
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VOL ^{Maximum Low−Level V}in ^{= V}IH ^{or V}IL
2.0
Output Voltage
I_OL = 50μA
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _4.5
0.0
0.1
0.0
0.1
0.0
0.1
2.48
3.80
0.1
V
0.1
0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Maximum Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Leakage Current}
V_in = V_IH or V_IL
I_OL = 4mA 3.0
I_OL = 8mA 4.5
V_in = 5.5 V or GND
(DIR, OE)
0 to 5.5
0.36
0.36
± 0.1
0.44
0.44
± 1.0
μA
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