MC74VHC1GT50_11 Datasheet, PDF (3/6 Pages) ON Semiconductor – Noninverting Buffer / CMOS Logic Level Shifter

MC74VHC1GT50
DC ELECTRICAL CHARACTERISTICS
V_CC
Symbol Parameter Test Conditions
(V)
T_A = 25°C
Min Typ Max
T_A ≤ 85°C
Min
Max
−55 ≤ T_A ≤ 125°C
Min
Max Unit
V_IH
V_IL
V_OH
V_OL
I_IN
I_CC
Minimum
High−Level
Input Voltage
1.65 to 2.29
2.3 to 2.99
3.0
4.5
5.5
0.50 V_CC
0.45 V_CC
1.4
2.0
2.0
0.50 V_CC
0.50 V_CC
V
0.45 V_CC
0.45 V_CC
1.4
1.4
2.0
2.0
2.0
2.0
Maximum
Low−Level
Input Voltage
1.65 to 2.29
2.3 to 2.99
3.0
4.5
5.5
0.10 V_CC
0.15 V_CC
0.53
0.8
0.8
0.10 V_CC
0.15 V_CC
0.53
0.8
0.8
0.10 V_CC V
0.15 V_CC
0.53
0.8
0.8
Minimum
V_IN = V_IH
1.65 to 2.99 V_CC − 0.1
V_CC − 0.1
V_CC − 0.1
V
High−Level
Output
I_OH = −50 mA
3.0
2.9
3.0
2.9
2.9
Voltage
4.5
4.4
4.5
4.4
4.4
V_IN = V_IH
I_OH = −4 mA
I_OH = −8 mA
3.0
2.58
4.5
3.94
V
2.48
2.34
3.80
3.66
Maximum
V_IN = V_IL
1.65 to 2.99
0.0
0.1
0.1
0.1
V
Low−Level
Output
I_OL = 50 mA
3.0
0.0
0.1
0.1
0.1
Voltage
4.5
0.1
0.1
0.1
V_IN = V_IL
I_OL = 4 mA
3.0
I_OL = 8 mA
4.5
V
0.36
0.44
0.52
0.36
0.44
0.52
Maximum
V_IN = 5.5 V or GND
0 to
Input
5.5
Leakage
Current
$0.1
$1.0
$1.0 mA
Maximum
V_IN = V_CC or GND
5.5
Quiescent
Supply
Current
1.0
20
40
mA
I_CCT Quiescent
Input: V_IN = 3.4 V
5.5
Supply
Current
1.35
1.50
1.65 mA
I_OPD Output
V_OUT = 5.5 V
0.0
0.5
5.0
10
mA
Leakage
Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tPLH, Maximum}
V_CC = 1.8 ± 0.15 V
C_L = 15 pF
16.6
T_A ≤ 85°C
Min Max
18.0
−55 ≤ T_A ≤ 125°C
Min
Max Unit
22.0 ns
t_PHL
Propagation
Delay, Input A to Y
V_CC = 2.5 ± 0.2 V
C_L = 15 pF
13.3
14.5
17.5 ns
C_L = 50 pF
19.5
22.0
25.5
V_CC = 3.3 ± 0.3 V
C_L = 15 pF
4.5 10.0
11.0
C_L = 50 pF
6.3 13.5
15.0
13.0 ns
17.5
V_CC = 5.0 ± 0.5 V
C_L = 15 pF
3.5 6.7
7.5
8.5
C_L = 50 pF
4.3 7.7
8.5
9.5
C_IN Maximum Input
Capacitance
5
10
10
10
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 5)
12
pF
5. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
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