MC74VHC1GT125DF1G Datasheet, PDF (3/6 Pages) ON Semiconductor – Noninverting Buffer CMOS Logic Level Shifter

MC74VHC1GT125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VIH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VIL MaximumLow−Level}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Input Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VOH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VOL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IIN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _ICCT
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOPD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOZ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _IOPD
Minimum High−Level
Output Voltage
V_IN = V_IH or V_IL
Maximum Low−Level
Output Voltage
V_IN = V_IH or V_IL
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
Quiescent Supply
Current
Output Leakage
Current
Maximum 3−State
Leakage Current
Output Leakage
Current
V_IN = V_IH or V_IL
I_OH = − 50 mA
V_IN = V_IH or V_IL
I_OH = − 4 mA
I_OH = − 8 mA
V_IN = V_IH or V_IL
I_OL = 50 mA
V_IN = V_IH or V_IL
I_OL = 4 mA
I_OL = 8 mA
V_IN = 5.5 V or GND
V_IN = V_CC or GND
Input: V_IN = 3.4 V
Other Input: V_CC or
GND
V_OUT = 5.5 V
V_IN = V_IH or V_IL
V_OUT = V_CC or GND
V_OUT = 5.5 V
V_CC
T_A = 25°C
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
(V) Min Typ Max Min Max Min
Max Unit
3.0 1.4
4.5 2.0
5.5 2.0
1.4
1.4
V
2.0
2.0
2.0
2.0
3.0
0.53
0.53
0.53 V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
3.0 2.9 3.0
2.9
2.9
V
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
2.48
2.34
3.80
3.66
3.0
0.0 0.1
0.1
4.5
0.0 0.1
0.1
0.1
V
0.1
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
0 to
± 0.10
± 1.0
± 1.0 mA
5.5
5.5
1.0
20
40 mA
5.5
1.35
1.50
1.65 mA
0.0
0.5
5.0
10 mA
5.5
± 0.25
± 2.5
± 2.5 mA
0.0
0.5
5.0
10 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPLH^,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHL
Parameter
Maximum Propagation
Delay, A to Y
(Figures 3 and 5.)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPZH
Maximum Output
Enable TIme,OE to Y
(Figures 4 and 5)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHZ
Maximum Output
Disable Time,OE to Y
(Figures 4 and 5)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cin MaximumInputCapacitance
C_out Maximum Three−State
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Output Capacitance}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(Output in High Impedance}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^State)
Test Conditions
V_CC = 3.3 ± 0.3 V C_L = 15pF
C_L = 50pF
V_CC = 5.0 ± 0.5 V C_L = 15pF
C_L = 50pF
V_CC = 3.3 ± 0.3 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
V_CC = 5.0 ± 0.5 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
V_CC = 3.3 ± 0.3 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
V_CC = 5.0 ± 0.5 V C_L = 15pF
R_L = R_I = 500 W C_L = 50pF
T_A = 25°C
Min Typ Max
5.6 8.0
8.1 11.5
3.8 5.5
5.3 7.5
5.4 8.0
7.9 11.5
3.6 5.1
5.1 7.1
6.5 9.7
8.0 13.2
4.8 6.8
7.0 8.8
4 10
6
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
Min Max Min
1.0 9.5
1.0 13.0
Max _Unit
12.0 ns
16.0
1.0 6.5
8.5
1.0 8.5
10.5
1.0 9.5
1.0 13.0
11.5 ns
15.0
1.0 6.0
7.5
1.0 8.0
9.5
1.0 11.5
1.0 15.0
14.5 ns
18.0
1.0 8.0
10.0
1.0 10.0
12.0
10
10 pF
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 5)
14
pF
5. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC / 4 (per buffer). C_PD is used to determine the
no−load dynamic power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
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