MC74VHC1GT04_07 Datasheet, PDF (3/6 Pages) ON Semiconductor – Inverting Buffer / CMOS Logic Level Shifter CMOS Logic Level Shifter

MC74VHC1GT04
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
V_CC
T_A = 25°C
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
(V) Min Typ Max Min Max Min
Max _Unit
V_IH Minimum High−Level
Input Voltage
3.0 1.4
4.5 2.0
5.5 2.0
1.4
1.4
V
2.0
2.0
2.0
2.0
V_IL Maximum Low−Level
Input Voltage
3.0
0.53
0.53
0.53
V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
V_OH Minimum High−Level
V_IN = V_IH or V_IL
3.0 2.9 3.0
2.9
2.9
V
Output Voltage
I_OH = −50 mA
4.5 4.4 4.5
4.4
4.4
V_IN = V_IH or V_IL
V_IN = V_IH or V_IL
V
I_OH = −4 mA
3.0 2.58
2.48
2.34
I_OH = −8 mA
4.5 3.94
3.80
3.66
V_OL Maximum Low−Level
V_IN = V_IH or V_IL
3.0
Output Voltage
I_OL = 50 mA
4.5
V_IN = V_IH or V_IL
V_IN = V_IH or V_IL
I_OL = 4.0 mA
3.0
I_OL = 8.0 mA
4.5
I_IN
Maximum Input
Leakage Current
V_IN = 5.5 V or GND
0 to
5.5
0.0 0.1
0.1
0.0 0.1
0.1
0.36
0.44
0.36
0.44
±0.1
±1.0
0.1
V
0.1
V
0.52
0.52
±1.0
mA
I_CC Maximum Quiescent
V_IN = V_CC or GND
5.5
Supply Current
1.0
20
40
mA
I_CCT
Quiescent Supply
Current
Input: V_IN = 3.4 V
5.5
1.35
1.50
1.65 mA
I_OPD Output Leakage
V_OUT = 5.5 V
0.0
0.5
5.0
10
mA
Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25°C}
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min Typ Max Min Max Min
Max _Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tPLH, Maximum Propagation VCC = 3.3 ± 0.3 V CL = 15 pF}
5.0 10.0
11.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_PHL Delay, Input A to Y
C_L = 50 pF
6.2 13.5
15.0
13.0
ns
17.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC = 5.0 ± 0.5 V CL = 15 pF}
3.8 6.7
7.5
8.5
C_L = 50 pF
4.2 7.7
8.5
9.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{CIN MaximumInput}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Capacitance
5.0 10
10
10
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 5)
10
pF
5. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
http://onsemi.com
3