MC74VHC1G86_13 Datasheet, PDF (3/6 Pages) ON Semiconductor – Single 2-Input Exclusive OR Gate

MC74VHC1G86
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
V_CC
T_A = 255C
T_A v 855C *555C to 1255C
(V)
Min Typ Max Min Max Min
Max
V_IH Minimum High−Level
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
2.1
2.1
3.15
3.15
3.85
3.85
V_IL
Maximum Low−Level
Input Voltage
2.0
0.5
0.5
0.5
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V_OH Minimum High−Level
Output Voltage
V_IN = V_IH or V_IL
V_OL Maximum Low−Level
Output Voltage
V_IN = V_IH or V_IL
I_IN
Maximum Input
Leakage Current
V_IN = V_IH or V_IL
2.0 1.9
I_OH = *50 mA 3.0
2.9
4.5 4.4
V_IN = V_IH or V_IL
I_OH = *4 mA 3.0
I_OH = *8 mA 4.5
V_IN = V_IH or V_IL
2.0
I_OL = 50 mA 3.0
4.5
2.58
3.94
V_IN = V_IH or V_IL
I_OL = 4 mA 3.0
I_OL = 8 mA 4.5
V_IN = 5.5 V or GND
0 to 5.5
2.0
1.9
3.0
2.9
4.5
4.4
2.48
3.80
0.0 0.1
0.1
0.0 0.1
0.1
0.0 0.1
0.1
0.36
0.36
$0.1
0.44
0.44
$1.0
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
$1.0
I_CC Maximum Quiescent
V_IN = V_CC or GND
5.5
Supply Current
1.0
10
40
Unit
V
V
V
V
mA
mA
AC ELECTRICAL CHARACTERISTICS C_load = 50 pF, Input t_r = t_f = 3.0 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25°C}
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min Typ Max Min Max Min
Max _Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPHL
Maximum Propagation V_CC = 3.3 ± 0.3 V C_L = 15 pF
Delay, Input A or B to Y
C_L = 50 pF
4.4 11.0
13.0
5.7 14.5
16.5
15.5 ns
19.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC=5.0±0.5V CL=15pF}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^CL ^{= 50 pF}
3.5 6.8
8.0
4.2 8.8
10.0
10.0
12.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^CIN ^MaximumInput
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Capacitance
5.5 10
10
10
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 6)
10
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
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