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MC74VHC1G50_06 Datasheet, PDF (3/8 Pages) ON Semiconductor – Buffer
MC74VHC1G50
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
Parameter
Minimum High--Level
Input Voltage
Test Conditions
VIL
Maximum Low--Level
Input Voltage
VOH
Minimum High--Level
VIN = VIH or VIL
Output Voltage
IOH = --50 mA
VIN = VIH or VIL
VIN = VIH or VIL
IOH = --4 mA
IOH = --8 mA
VOL
Maximum Low--Level
Output Voltage
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
ICC
Maximum Quiescent
VIN = VCC or GND
Supply Current
VCC
TA = 25°C
TA ≤ 85°C --55 ≤ TA ≤ 125°C
(V) Min Typ Max Min Max Min
Max Unit
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
2.0 1.9 2.0
1.9
1.9
V
3.0 2.9 3.0
2.9
2.9
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
2.0
0.0 0.1
0.1
3.0
0.0 0.1
0.1
4.5
0.0 0.1
0.1
0.1
V
0.1
0.1
V
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
0 to
±0.1
±1.0
±1.0 mA
5.5
5.5
1.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
TA = 25°C
Symbol
Parameter
Test Conditions
Min Typ Max
tPLH,
tPHL
Maximum Propaga-
tion Delay,
Input A to Y
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.5 7.1
6.4 10.6
3.5 5.5
4.5 7.5
CIN
Maximum Input Ca-
pacitance
4
10
TA ≤ 85°C --55 ≤ TA ≤ 125°C
Min Max Min
Max Unit
8.5
10.0 ns
12.0
14.5
6.5
8.0
8.5
10.0
10
10
pF
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 6)
8.0
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD ¯ VCC ¯ fin + ICC. CPD is used to determine the no--load dynamic
power consumption; PD = CPD ¯ VCC2 ¯ fin + ICC ¯ VCC.
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